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Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
* High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm 2009B
[2SB631, 631K/2SD600, 600K]
( ) : 2SB631, 631K
1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB631, D600 (-)100 (-)100
2SB631K, D600K (-)120 (-)120 (-)5 (-)1 (-)2 1
Unit V V V A A W W
Tc=25C
Tj Tstg
8 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ICBO IEBO IE=(-)10A, IC=0 VCB=(-)50V, IE=0 VEB=(-)4V, IC=0 Conditions B631, D600 B631K, D600K B631, D600 B631K, D600K Ratings min (-)100 (-)120 (-)100 (-)120 (-)5 (-)1 (-)1 typ max Unit V V V V V A A
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346-1/4
2SB631, 631K/2SD600, 600K
Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Fall Time Turn-OFF Time Storage Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) tf toff tstg Conditions VCE=(-)5V, IC=(-)50mA VCE=(-)5V, IC=(-)500mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)500mA, IB=(-)50mA IC=(-)500mA, IB=(-)50mA See specified Test Circuit See specified Test Circuit See specified Test Circuit Ratings min 60* 20 (110) 130 (30)20 (-)0.15 (-)0.85 (80) 100 (100) 500 (600) 700 (-)0.4 (-)1.2 MHz MHz pF V V ns ns ns ns ns ns typ max 320* Unit
* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
60 D 120 100 E 200 160 F 320
Switching Time Test Circuit
No.346-2/4
2SB631, 631K/2SD600, 600K
No.346-3/4
2SB631, 631K/2SD600, 600K
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any and all SANYO products described or contained herein fall under strategic products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of Japan, such products must not be exported without obtaining export license from the Ministry of International Trade and Industry in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of September, 1998. Specifications and information herein are subject to change without notice.
PS No.346-4/4

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